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Silicon photonics technology on 200mm CMOS platform for high-integration applications
Author(s): Bin Li; Bo Tang; Peng Zhang; Daoqun Liu; Ruonan Liu; Zhangyu Zhou; Jinzhong Yu; Zhihua Li
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Paper Abstract

Silicon photonics is poised to revolutionize many application areas, such as telecommunication, date centers, biosensing, high performance computing, etc. A whole silicon photonics process flow based on 200mm CMOS platform and the performance of photonics devices were described in this paper. A series of optimized process, including photolithography, etching, hydrogen annealing, ion implantation, epitaxial growth, etc., are implemented to fabricate low-loss passive devices and high-speed active devices. The propagation loss is sensitive to sidewall roughness originated from the waveguide-patterning process. Hydrogen annealing is an effective method to reduce the propagation loss of waveguides. Every level of implantation in top silicon layer is performed respectively, including the p++, p+, p, n++, n+ and n doping for the modulators, p++, p+, n++ and n+ implants for Ge photodetector. Epitaxial Ge is considered to be an excellent material for photodetectors. High-quality Ge on silicon is grown via selective epitaxy using SiO2 as growth mask, followed by a CMP process to planarize the top of the selectively grown Ge. In our platform, the propagation loss of waveguide is measured to be 2.5dB/cm, the insertion loss of grating coupler at 1550nm is 4.5dB/facet, the crosstalk of cross waveguide is lower than -30dB, the insertion loss of 8 channels 200GHz AWG is approximately 3.3dB, the 3dB bandwidth of MZ modulator achieves higher than 20GHz, and the Ge photodetector operates at high data rate exceeding 40Gbps.

Paper Details

Date Published: 5 November 2018
PDF: 8 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 1081412 (5 November 2018); doi: 10.1117/12.2326771
Show Author Affiliations
Bin Li, Institute of Microelectronics (China)
Bo Tang, Institute of Microelectronics (China)
Peng Zhang, Institute of Microelectronics (China)
Daoqun Liu, Institute of Microelectronics (China)
Ruonan Liu, Institute of Microelectronics (China)
Zhangyu Zhou, Institute of Microelectronics (China)
Jinzhong Yu, Institute of Microelectronics (China)
Institute of Semiconductors (China)
Zhihua Li, Institute of Microelectronics (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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