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Proceedings Paper

Highly photosensitive vertical photodetectors based on CsPbBr3 and PbS quantum dot layered heterojunction
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Paper Abstract

To overcome existing limitations in sensitivity and cost of state-of-the-art systems, new-style device structures and composite material systems are needed with low-cost fabrication and high performance. Vertical field effect photodetectors are fabricated with Au/Ag nanowires as the transparent source electrode and with vertically stacked layers of CsPbBr3 and lead sulfide quantum dots, which formed heterojunctions. The built-in electric field in the layered heterojunction aids the separation of photoinduced excitons, while the short channel enables efficient carrier transport across the active region. Both of these benefits enable a high photo performance and fast photoresponse. This vertical phototransistors exhibit a wide response spectrum from 400 to 2100 nm, a high photoresponsivity of more than 9 × 108 AW−1, and a high detectivity of up to 2 × 1017 Jones (cm Hz1/2 W−1) under infrared illumination. Additionally, this vertical phototransistor had a response time of 3 μs. The solution –based fabrication process and excellent device performances strongly underscore vertical architecture combined with the layered heterojunction as a promising approach for future photodetection field.

Paper Details

Date Published: 5 November 2018
PDF: 9 pages
Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 1081411 (5 November 2018); doi: 10.1117/12.2326283
Show Author Affiliations
Yu Yu, Tianjin Univ. (China)
Yating Zhang D.D.S., Tianjin Univ. (China)
Lufan Jin, Tianjin Univ. (China)
Zhiliang Chen, Tianjin Univ. (China)
Yifan Li, Tianjin Univ. (China)
Qingyan Li, Tianjin Univ. (China)
Mingxuan Cao, Tianjin Univ. (China)
Yongli Che, Tianjin Univ. (China)
Jianquan Yao, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 10814:
Optoelectronic Devices and Integration VII
Xuping Zhang; Baojun Li; Changyuan Yu; Xinliang Zhang, Editor(s)

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