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Growth of aluminum nitride on silicon by metalorganic chemical vapor deposition (Conference Presentation)
Author(s): Andrew P. Lange; S. Mahajan
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Paper Abstract

The epitaxial growth of group III-nitride structures on silicon by metalorganic chemical vapor deposition requires careful management of thermal stress. Cracking due to thermal mismatch in these structures can be mitigated using aluminum nitride (AlN) buffer layers which induce compressive strain in overgrown gallium nitride. However, lattice mismatch between AlN and silicon and reactions between ammonia, aluminum, and silicon during the initial stages of growth require careful process control during film nucleation. In this paper, transmission electron microscopy studies of dislocation structures at the interface between silicon and aluminum nitride buffer layers will be presented. The atomic structure at the interface differed when either aluminum or ammonia were introduced into the chamber first. These observations are generally consistent with what others have found and raise interesting questions about the formation mechanisms of dislocations during AlN growth.

Paper Details

Date Published: 17 September 2018
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Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 1075406 (17 September 2018); doi: 10.1117/12.2323754
Show Author Affiliations
Andrew P. Lange, Lawrence Livermore National Lab. (United States)
S. Mahajan, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 10754:
Wide Bandgap Power and Energy Devices and Applications III
Mohammad Matin; Srabanti Chowdhury; Achyut K. Dutta, Editor(s)

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