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Proceedings Paper

A study of temperature dependent current-voltage (I-V-T) characteristics in Ni/(-201) β-Ga2O3 Schottky diode (Conference Presentation)
Author(s): Jianyi Gao; Zheng Xu; Siwei Li; Srabanti Chowdhury
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Paper Abstract

Gallium oxide (Ga2O3) is a promising wide bandgap semiconductor for power electronic applications. Investigation into the conduction mechanism of Ga2O3 Schottky diodes is important for improving the device performance. In this study, the forward-biased temperature dependent current-voltage (I-V-T) characteristics of Ni/(-201) β-Ga2O3 Schottky diodes have been investigated in the temperature range of 298-473 K. The apparent barrier height (ϕ_ap) increased while the ideality factor (n) decreased with the increase in temperature. Such a temperature dependent behavior of ϕ_ap and n was explained by the inhomogeneity of ϕ_ap, which obeyed Gaussian distribution with mean barrier height of 1.8 eV and standard deviation of 201 mV. Subsequently, zero-bias barrier height (¯ϕ_B0) and Richardson constant (A*) were obtained from the slope and intercept of the modified Richardson plot as 1.18 e V and 94.04 A·cm-2·K-2, respectively. The ¯ϕ_B0 obtained from the modified Richardson plot was in good agreement with the theoretical value calculated from the work function of Ni and electron affinity of β-Ga2O3. The I-V-T characteristics of Ni/-Ga2O3 Schottky diodes can be successfully explained by the thermionic emission theory with a single Gaussian distribution of the barrier height.

Paper Details

Date Published: 17 September 2018
Proc. SPIE 10754, Wide Bandgap Power and Energy Devices and Applications III, 107540D (17 September 2018); doi: 10.1117/12.2323378
Show Author Affiliations
Jianyi Gao, Univ. of California, Davis (United States)
Zheng Xu, Univ. of California, Davis (United States)
Siwei Li, Univ. of California, Davis (United States)
Srabanti Chowdhury, Univ. of California, Davis (United States)

Published in SPIE Proceedings Vol. 10754:
Wide Bandgap Power and Energy Devices and Applications III
Mohammad Matin; Srabanti Chowdhury; Achyut K. Dutta, Editor(s)

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