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High operating temperature MCT discrete detector data and analysis
Author(s): E. Robinson; V. R. Khalap; A. I. D'Souza; M. R. Skokan; M. Kinch
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Paper Abstract

High Density Vertically Integrated Photodiodes (HDVIP) MWIR detectors were fabricated in LPE-grown Mercury Cadmium Telluride material. Devices were fabricated with two different acceptor level concentrations. The low doped n-region was held at a single concentration but the dimensions are tailored to simultaneously maintain high quantum efficiency while minimizing dark current and 1/f noise. Since this study target was for operating at high temperatures, detector I-V data was collected between 120 K and 280 K for I-Vs and 180 to 280 K for noise to understand current mechanisms that limit device performance at these elevated temperatures. Noise as a function of frequency has also been collected over the same temperature range. 1/f noise has also been modeled for MWIR detectors as a function of temperature and will be covered.

Paper Details

Date Published: 18 September 2018
PDF: 10 pages
Proc. SPIE 10766, Infrared Sensors, Devices, and Applications VIII, 107660E (18 September 2018); doi: 10.1117/12.2323256
Show Author Affiliations
E. Robinson, Leonardo DRS (United States)
V. R. Khalap, Leonardo DRS (United States)
A. I. D'Souza, Leonardo DRS (United States)
M. R. Skokan, Leonardo DRS (United States)
M. Kinch, Leonardo DRS (United States)


Published in SPIE Proceedings Vol. 10766:
Infrared Sensors, Devices, and Applications VIII
Paul D. LeVan; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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