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Proceedings Paper

Theory of bilinear magneto-electric resistance from topological-insulator surface states
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Paper Abstract

We theoretically investigate a new kind of nonlinear magnetoresistance on the surface of three-dimensional topological insulators (TIs). At variance with the unidirectional magnetoresistance (UMR) effect in magnetic bilayers, this nonlinear magnetoresistance does not rely on a conducting ferromagnetic layer and scales linearly with both the applied electric and magnetic fields; for this reason, we name it bilinear magneto-electric resistance (BMER). We show that the sign and the magnitude of the BMER depends sensitively on the orientation of the current with respect to the magnetic field as well as the crystallographic axes - a property that can be utilized to map out the spin texture of the topological surface states via simple transport measurement, alternative to the angle-resolved photoemission spectroscopy (ARPES).

Paper Details

Date Published: 20 September 2018
PDF: 11 pages
Proc. SPIE 10732, Spintronics XI, 1073215 (20 September 2018); doi: 10.1117/12.2323126
Show Author Affiliations
Steven S.-L. Zhang, Argonne National Lab. (United States)
Univ. of Missouri (United States)
Giovanni Vignale, Univ. of Missouri (United States)

Published in SPIE Proceedings Vol. 10732:
Spintronics XI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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