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Large voltage tuning of Dzyalonshinskii-Moriya interaction: towards a chirality switch?
Author(s): Claire Baraduc; Titiksha Srivastava; Marine Schott; Mohamed Belmeguenai; Yves Roussigné; Anne Bernand-Mantel; Laurent Ranno; Stefania Pizzini; S. M. Chérif; A. Stashkevich; Stéphane Auffret; Mair Chshiev; Hélène Béa
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Paper Abstract

Electric field can tune interfacial magnetism, thus paving the way towards new low power devices using gate voltage. In particular, its effect on skyrmions, which are promising to code information bits, is a critical issue. Here, we first address the effect of electric field on interfacial anisotropy in Pt/Co/AlOx ultrathin trilayers and the possibility to control skyrmion nucleation and annihilation with gate voltage. Then we report the effect of electric field on the interfacial interaction responsible for skyrmions, namely Dzyaloshinskii-Moriya Interaction (DMI). We demonstrate an unprecedented large electric field effect on DMI (βDMI = 600 fJV-1m-1) in Ta/FeCoB/TaOx ultrathin trilayers through Brillouin Light Scattering spectroscopy. Additional Kerr effect observations lead us to propose that electric field could ultimately reverse the sign of DMI, resulting in chirality switch.

Paper Details

Date Published: 21 September 2018
PDF: 8 pages
Proc. SPIE 10732, Spintronics XI, 1073232 (21 September 2018); doi: 10.1117/12.2323104
Show Author Affiliations
Claire Baraduc, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec (France)
Titiksha Srivastava, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec (France)
Marine Schott, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec (France)
Univ. Grenoble Alpes, CNRS, Néel Institute (France)
Mohamed Belmeguenai, Lab. des Sciences de Procédés et des Matériaux, Univ. Paris 13 Nord (France)
Yves Roussigné, Lab. des Sciences de Procédés et des Matériaux, Univ. Paris 13 Nord (France)
Anne Bernand-Mantel, Univ. Grenoble Alpes, CNRS, Néel Institute (France)
Laurent Ranno, Univ. Grenoble Alpes, CNRS, Néel Institute (France)
Stefania Pizzini, Univ. Grenoble Alpes, CNRS, Néel Institute (France)
S. M. Chérif, Univ. Grenoble Alpes, CNRS, Néel Institute (France)
A. Stashkevich, Lab. des Sciences de Procédés et des Matériaux, Univ. Paris 13 Nord (France)
Stéphane Auffret, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec (France)
Mair Chshiev, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec (France)
Hélène Béa, Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec (France)


Published in SPIE Proceedings Vol. 10732:
Spintronics XI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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