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Terahertz emission from InGaAs with increased indium content
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Paper Abstract

We have investigated the influence of indium content (x) increase on spectral characteristics of InxGa1-xAs photoconductor. To avoid the mismatch between crystalline parameters of InxGa1-xAs and GaAs wafer we proposed to incorporate a step-graded metamorphic buffer layer. We showed that x increase strongly enhances THz emission and broadens THz spectrum of InxGa1-xAs. Since no polarity rehearsal of the THz waveform occurs and electron diffusion mobility increases up to 90% with x increase we attribute the increase of THz intensity to photo-Dember effect contribution. The maximum efficiency of optical-to-THz conversion was obtained for In0.72Ga0.28 As at optical fluence ~0.01 μJ=cm2. The fabricated photoconductors can be used as promising photo-Dember or lateral photo-Dember THz emitters in pulsed THz spectroscopy and imaging, in particular, operating with long wave optical pump.

Paper Details

Date Published: 5 October 2018
PDF: 5 pages
Proc. SPIE 10800, Millimetre Wave and Terahertz Sensors and Technology XI, 108000D (5 October 2018); doi: 10.1117/12.2322536
Show Author Affiliations
A. E. Yachmenev, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
A.M. Prokhorov General Physics Institute (Russian Federation)
R. A. Khabibullin, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
A.M. Prokhorov General Physics Institute (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
I. E. Ilyakov, Institute of Applied Physics (Russian Federation)
I. A. Glinskiy, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
A.M. Prokhorov General Physics Institute (Russian Federation)
A. S. Kucheryavenko, Bauman Moscow State Technical Univ. (Russian Federation)
B. V. Shishkin, Institute of Applied Physics (Russian Federation)
R. A. Akhmedzhanov, Institute of Applied Physics (Russian Federation)
K. I. Zaytsev, A.M. Prokhorov General Physics Institute (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
Sechenov First Moscow State Medical Univ. (Russian Federation)
D. S. Ponomarev, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
A.M. Prokhorov General Physics Institute (Russian Federation)


Published in SPIE Proceedings Vol. 10800:
Millimetre Wave and Terahertz Sensors and Technology XI
Neil A. Salmon; Frank Gumbmann, Editor(s)

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