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Proceedings Paper

Generation of nonequilibrium optical phonons in GaAs/AlAs quantum wells by intrasubband and intersubband scatterings
Author(s): Keith R. Wald
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Paper Abstract

The generation of a nonequilibrium population of optical phonons by photoexcited hot electrons in semiconductor quantum wells is investigated theoretically. The microscopic model of electron-phonon interaction proposed by Huang and Zhu has been used to compute the distributions of confined longitudinal optical phonons and interface modes in GaAs/AlAs quantum wells as a function of well width. Experimental tests of the calculated distributions by Raman scattering are discussed.

Paper Details

Date Published: 1 February 1992
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Proc. SPIE 1599, Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine, (1 February 1992); doi: 10.1117/12.2322278
Show Author Affiliations
Keith R. Wald, Univ. of California, Berkeley (United States)


Published in SPIE Proceedings Vol. 1599:
Recent Advances in the Uses of Light in Physics, Chemistry, Engineering, and Medicine

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