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Proceedings Paper

Diffraction grating formation on porous silicon using a CO2 laser
Author(s): A. U. Dar'jushkin; V. A. Karavanskii; S. B. Korovin; Vladimir I. Pustovoy; K. Timoshechkin
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Paper Abstract

Large interest to porous silicon (PS) has arisen since the discovery of its intensive luminescence in the visible range under ultraviolet radiation or charge injection excitation. A lot of experimental and theoretical works have been devoted to the investigation of PS microstructure, its electrical, electro-optical, linear and non-linear-optical properties. This research was stimulated by the prospects of creation of integrated electro-optical devices on a silicon base. Formation of diffractional grating on the porous silicon layer may be interesting for the planar technology optoelectronic devices on the porous silicon. This work is also interesting from the point of view of powerful pulse radiation interaction with PS and influence on its optical and structural properties.

Paper Details

Date Published: 11 March 1996
PDF: 6 pages
Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232226
Show Author Affiliations
A. U. Dar'jushkin, General Physics Institute (Russia)
V. A. Karavanskii, General Physics Institute (Russia)
S. B. Korovin, General Physics Institute (Russia)
Vladimir I. Pustovoy, General Physics Institute (Russia)
K. Timoshechkin, General Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2777:
ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics
Alexander M. Prokhorov; Vladimir I. Pustovoy, Editor(s)

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