Share Email Print
cover

Proceedings Paper

Structure and properties of porous GaAs
Author(s): Yu. N. Buzynin; S. A. Gusev; M. N. Drozdov; Yu. N. Drozdov; Z. F. Krasilnik; A. V. Murel; Dmitry G. Revin; Vladimir I. Shashkin; I. Yu. Shuleshova
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

In this paper we report the first results obtained in the study on the properties of porous GaAs (P-GaAs) produced by electrochemical etching in electrolytes on the basis of hydrofluoric acid. As the initial material we used monocrystalline n- and p-type (100)GaAs substrates Te- and Zn-doped to 2*1018 cm-3 and 6*1018 cm-3, respectively. The substrates were subjected to chemical-mechanical and diamond-paste polish. Etching was performed in an electrolytic cell with a platinum cathode in the galvanostatic regime with anode current densities ranging from 5 to 150 mA/cm2. We were interested in P-GaAs layers with thicknesses from 0.5 to 50 micrometers. The methods used in the study of P-GaAs samples included x-ray diffractometry, electron microscopy, x-ray microanalysis, secondary ion-mass spectroscopy, electrochemical C-V profiling and photoluminescence.

Paper Details

Date Published: 11 March 1996
PDF: 10 pages
Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232225
Show Author Affiliations
Yu. N. Buzynin, Institute for Physics of Microstructures (Russia)
S. A. Gusev, Institute for Physics of Microstructures (Russia)
M. N. Drozdov, Institute for Physics of Microstructures (Russia)
Yu. N. Drozdov, Institute for Physics of Microstructures (Russia)
Z. F. Krasilnik, Institute for Physics of Microstructures (Russia)
A. V. Murel, Institute for Physics of Microstructures (Russia)
Dmitry G. Revin, Institute for Physics of Microstructures (Russia)
Vladimir I. Shashkin, Institute for Physics of Microstructures (Russia)
I. Yu. Shuleshova, Institute for Physics of Microstructures (Russia)


Published in SPIE Proceedings Vol. 2777:
ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics
Alexander M. Prokhorov; Vladimir I. Pustovoy, Editor(s)

© SPIE. Terms of Use
Back to Top