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Proceedings Paper

Effect of electric arc plasma jet treatment on porous silicon properties
Author(s): V. I. Beclemishev; V. M. Maslovsky; Alexander I. Belogorokhov; G. Y. Pavlov; V. A. Karavanskii; Nikolay N. Melnik; T. N. Zavaritskaja
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Paper Abstract

The effect of arc plasma jet treatment (APJT) on the porous silicon (PS) structure, surface, and photoluminescence (PL) has been studied. The investigation of PS FTIR absorption spectra indicate that the Ar/air APJT induces the decreasing of the concentration of Si-Hn, C-Hn, (n equals 1, 2, 3) bonds and corresponding increasing of Si-Ox bonds more than an order of magnitude. This transformation of surface conditions resulted in not enough large decreasing (about 2 - 3 times maximum) of the PL intensity with red shifting of the peak from 665 nm to 700 nm. These results suggest that the change of PL occurs as a result of APJT induced replacement of the Si-Hn bonds with Si-Ox bonds. We have analyzed the effect of plasma conditions on the PL characteristics. The luminescence mechanism is also discussed.

Paper Details

Date Published: 11 March 1996
PDF: 5 pages
Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232224
Show Author Affiliations
V. I. Beclemishev, Zelenograd Research Institute of Physical Problems (Russia)
V. M. Maslovsky, Zelenograd Research Institute of Physical Problems (Russia)
Alexander I. Belogorokhov, Ctr. for Analysis of Substances (Russia)
G. Y. Pavlov, Ctr. for Analysis of Substances (Russia)
V. A. Karavanskii, General Physics Institute (Russia)
Nikolay N. Melnik, P.N. Lebedev Physical Institute (Russia)
T. N. Zavaritskaja, P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 2777:
ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics

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