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Proceedings Paper

Observation of surface phonon mode in porous GaP
Author(s): V. A. Karavanskii; Evangelos Anastassakis; Y. S. Raptis; V. N. Sokolov; I. M. Tiginyanu; V. V. Ursaki
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Paper Abstract

Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range of possible practical applications of well-known semiconducting materials. The bright visible photoluminescence (PL), in particular, of porous silicon has made this material very promising in the technology of light-emitting devices. The visible PL of nanosized silicon particles is supposed to be connected with a quantum size effect which transforms the indirect gap material into a direct gap one with a simultaneous strong increase of EG. This type of band gap engineering approach may be useful when applied to indirect gap semiconductors, other than Si. Porous GaP is such an example; it was fabricated recently and has exhibited intense green PL and a broadened LO phonon Raman peak. In this communication we present detailed experimental results on Raman scattering (RS) spectra of porous GaP layers obtained by electrochemical anodization of (100) and (111) substrates in hydrofluoric acid solution at different current densities.

Paper Details

Date Published: 11 March 1996
PDF: 6 pages
Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232222
Show Author Affiliations
V. A. Karavanskii, General Physics Institute (Russia)
Evangelos Anastassakis, National Technical Univ. (Greece)
Y. S. Raptis, National Technical Univ. (Greece)
V. N. Sokolov, Moscow State Univ. (Russia)
I. M. Tiginyanu, Institute of Applied Physics (Moldova)
V. V. Ursaki, Institute of Applied Physics (Moldova)


Published in SPIE Proceedings Vol. 2777:
ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics
Alexander M. Prokhorov; Vladimir I. Pustovoy, Editor(s)

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