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Terahertz emission from 2D nanomaterials
Author(s): Kateryna Kushnir; Mengjing Wang; Ying Qin; Guangjiang Li; Sefaattin Tongay; Kristie J. Koski; Lyubov V. Titova
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Paper Abstract

Group-IV monochalcogenides belong to a family of 2D layered materials. Monolayers of group-IV monochalcogenides GeS, GeSe, SnS and SnSe have been theoretically predicted to exhibit a large shift current owing to a spontaneous electric polarization at room temperature. Using THz emission spectroscopy, we find that above band gap photoexcitation with ultrashort laser pulses results in emission of nearly single-cycle THz pulses due to a surface shift current in multi-layer, sub-μm to few- μm thick GeS and GeSe, as inversion symmetry breaking at the crystal surface enables THz emission by the shift current. Experimental demonstration of THz emission by the surface shift current puts this layered group-IV monochalcogenides forward as a candidate for next generation shift current photovoltaics, nonlinear photonic devices and THz sources.

Paper Details

Date Published: 14 September 2018
PDF: 4 pages
Proc. SPIE 10756, Terahertz Emitters, Receivers, and Applications IX, 107560S (14 September 2018); doi: 10.1117/12.2322160
Show Author Affiliations
Kateryna Kushnir, Worcester Polytechnic Institute (United States)
Mengjing Wang, Brown Univ. (United States)
Ying Qin, Arizona State Univ. (United States)
Guangjiang Li, Worcester Polytechnic Institute (United States)
Sefaattin Tongay, Arizona State Univ. (United States)
Kristie J. Koski, Univ. of California, Davis (United States)
Lyubov V. Titova, Worcester Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 10756:
Terahertz Emitters, Receivers, and Applications IX
Manijeh Razeghi; Alexei N. Baranov, Editor(s)

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