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Proceedings Paper

Laser deposition of thin buffer and YBCO thin films on Si and GaAs substrates
Author(s): Rumen I. Tomov; Peter A. Atanasov; Valery S. Serbezov
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Paper Abstract

The growth and characterization of YBaCuO thin films and related buffer layers (BaTiO3, ZrO2, BaTiO3, LiNbO3) grown by laser ablation on Si and GaAs substrates, are described. Both buffers and YBuCuO layers have been deposited using XeCl excimer laser (308 nm). The morphology and structure of the films have been determined using XRD and SEM analyses. A good quality textured YBaCuO film could be grown on single crystal as well as polycrystalline buffer layer deposited on Si and GaAs. The key to the successful film deposition is the low processing temperatures involved, which minimized the interface reactions as observed by EDAX spectroscopy, as well as direct cw carbon-dioxide laser irradiation of growing film.

Paper Details

Date Published: 11 March 1996
PDF: 6 pages
Proc. SPIE 2777, ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics, (11 March 1996); doi: 10.1117/12.232214
Show Author Affiliations
Rumen I. Tomov, Institute of Electronics (Bulgaria)
Peter A. Atanasov, Institute of Electronics (Bulgaria)
Valery S. Serbezov, Institute of Electronics (Bulgaria)

Published in SPIE Proceedings Vol. 2777:
ALT'95 International Symposium on Advanced Materials for Optics and Optoelectronics
Alexander M. Prokhorov; Vladimir I. Pustovoy, Editor(s)

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