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Proceedings Paper

Atomic layer epitaxy of YBaCuO for optoelectronic applications
Author(s): R. A. Skogman
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Paper Abstract

A MOCVD based atomic layer epitaxy process is being developed as a potential solution to the problems of film thickness and interface abruptness control which are encountered when fabricating superconductor-insulator-superconductor (SIS) devices using YBa2Cu3O7-x. In initial studies, the atomic layer MOCVD process has yielded superconducting YBa2Cu3O7-x films with substrate temperatures of 605°C during film growth, and no post deposition anneal. The low temperature process yields a smooth film surface and will reduce interface degradation due to diffusion.

Paper Details

Date Published: 1 March 1992
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Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); doi: 10.1117/12.2321837
Show Author Affiliations
R. A. Skogman, APA Optics, Inc. (United States)


Published in SPIE Proceedings Vol. 1597:
Progress in High-Temperature Superconducting Transistors and Other Devices II

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