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Proceedings Paper

Large area ion beam sputtered YBa2Cu3O7-d films for novel device structures
Author(s): A. Gauzzi
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Paper Abstract

We report on the improvements in preparation of large area superconducting YBa2Cu3O7-d films by single target ion beam sputtering. We show that, under suitable and reproducible sputtering conditions, the '123' stoichiometry is transferred from the YBa2Cu3O7-δ target to the substrates. As deposited films on <100> SrTiO3 show excellent superconducting properties (Tc0=90±0.5 K, ΔTc< 1 K, jc(77 K)=1.0-1.2x106 A cm-2) over areas larger than ≈30 cm2. Lower Tc0's (60-70 K) have been obtained on Si and GaAs wafers with a conducting Indium Tin Oxide (ITO) buffer layer.

Paper Details

Date Published: 1 March 1992
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Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); doi: 10.1117/12.2321829
Show Author Affiliations
A. Gauzzi, Swiss Federal Institute of Technology at Lausanne (Switzerland)


Published in SPIE Proceedings Vol. 1597:
Progress in High-Temperature Superconducting Transistors and Other Devices II

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