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Proceedings Paper

Optical waveguide modulation in an (In,Ga)As strain layer superlattice structure
Author(s): K. T. Lee
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Paper Abstract

We report on the design and experimental characteristics of waveguide electroabsorption modulator structures realised in (In,Ga)As strain superlattice material grown by MBE. Maximum modulation depths at wavelengths near to 980 nm are obtained with 15% indium fraction. A switching ratio of nearly 2:1 was achieved with -8 V applied bias.

Paper Details

Date Published: 1 December 1992
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Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321809
Show Author Affiliations
K. T. Lee, Univ. of Glasgow (United States)


Published in SPIE Proceedings Vol. 1582:
Integrated Optoelectronics for Communication and Processing
C.-S. Hong, Editor(s)

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