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Proceedings Paper

Novel processing techniques for optoelectonic devices and their integration
Author(s): James L. Merz
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Paper Abstract

Novel processing techniques currently being developed for the fabrication of optoelectronic devices will be described, including fabrication of low threshold lasers using in-situ-monitored reactive ion etching, the use of impurity-induced-disordering to form high-performance lasers with self-aligned Si/Zn-diffused junctions, and the fabrication of in-plane surface-emitting lasers with 45° etched facets. Application to the monolithic integration of optoelectronic devices will be discussed.

Paper Details

Date Published: 1 December 1992
Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321799
Show Author Affiliations
James L. Merz, Univ. of California, Santa Barbara (United States)

Published in SPIE Proceedings Vol. 1582:
Integrated Optoelectronics for Communication and Processing
C.-S. Hong, Editor(s)

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