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Proceedings Paper

Monolithic balanced pin-JFET front-end for 1.3-1.5 un coherent transmission
Author(s): Louis Giraudet
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Paper Abstract

InGaAs based balanced pin-JEET front-ends have been fabricated, using a single step MBE growth and a diffused gate technology. High responsivity photodiodes were obtained by the use of an A1GaInAS window layer, and a good balance in pin characteristics was obtained. The JEET structure incorporates a two doping level channel. Input noise density of the front-ends was measured to be below 15 pAiÖHz up to 1 GHz, togetherwith a common mode noise rejection below -35dB.

Paper Details

Date Published: 1 December 1992
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Proc. SPIE 1582, Integrated Optoelectronics for Communication and Processing, (1 December 1992); doi: 10.1117/12.2321795
Show Author Affiliations
Louis Giraudet, CNES (France)


Published in SPIE Proceedings Vol. 1582:
Integrated Optoelectronics for Communication and Processing
C.-S. Hong, Editor(s)

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