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Proceedings Paper

Lateral heterostructures in two-dimensional transition metal dichaolcogenides for optoelectronic applications (Conference Presentation)
Author(s): Hossein Taghinejad; Ali A. Eftekhar; Ali Adibi
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Paper Abstract

A new approach for realization of lateral heterostructures with lithography-defined junction profiles based on selective-area control of two-dimensional transition metal dichalcogenide (2D TMDC) alloys is presented. The unprecedented degree of control over the in-plane spatial profile and alloy composition of the 2D TMDC alloying process enables the precise tuning of the shape and optoelectronic properties of the resulting TMDC heterostructures and formation of quantum structures (e.g., quantum dots and quantum lines) for optoelectronic applications. The main challenges in realization of such high-quality lateral heterostructures, especially the effect of alloying-induced strain and defects on the structural and optoelectronic properties of TMDC alloys, and solutions to address these challenges will be discussed in depth. The application of these unique structures for light generation and detection will also be discussed.

Paper Details

Date Published: 17 September 2018
Proc. SPIE 10721, Active Photonic Platforms X, 107210L (17 September 2018); doi: 10.1117/12.2321681
Show Author Affiliations
Hossein Taghinejad, Georgia Institute of Technology (United States)
Ali A. Eftekhar, Georgia Institute of Technology (United States)
Ali Adibi, Georgia Institute of Technology (United States)

Published in SPIE Proceedings Vol. 10721:
Active Photonic Platforms X
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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