Share Email Print
cover

Proceedings Paper

Numerical analysis of the indium compositional variation on the efficiency droop of the GaN-based light-emitting diodes
Author(s): Maaz Islam; Muhammad Usman; Urooj Mushtaq; Nabila Nawaz; Khasan Karimov; Nazeer Muhammad; Kiran Saba
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

We report numerical analysis of the four graded indium compositions and their influence on the optoelectronic performance is reported. We propose a wedge-shaped indium grading with a better optoelectronic performance in comparison to the other three structures. The proposed structure has significantly improved internal quantum efficiency, light output power and radiative recombination.

Paper Details

Date Published: 4 September 2018
PDF: 5 pages
Proc. SPIE 10755, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XII, 107550O (4 September 2018); doi: 10.1117/12.2321287
Show Author Affiliations
Maaz Islam, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)
Muhammad Usman, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)
Urooj Mushtaq, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)
Nabila Nawaz, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)
Khasan Karimov, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)
Nazeer Muhammad, COMSATS Institute of Information Technology (Pakistan)
Kiran Saba, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan)


Published in SPIE Proceedings Vol. 10755:
Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications XII
Shizhuo Yin; Ruyan Guo, Editor(s)

© SPIE. Terms of Use
Back to Top