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Proceedings Paper

Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3 at room temperature
Author(s): A. Das; V. M. Goossens; A. S. Goossens; T. Banerjee
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Paper Abstract

An electric field modulation of tunneling anisotropic magnetoresistance (TAMR) is reported at the Schottky interface of Ni and Nb-doped SrTiO3 at room temperature. TAMR response as high as 0.11% is observed in the bias dependence. A bias is applied across the Schottky junction whose variation also modulates the built-in electric field across the interface. This is simulated from the electrostatic modelling across the Schottky interface. Strength of the TAMR response and its modulation with electric field is strongly dependent on the large dielectric permittivity of SrTiO3 at room temperature and on the modulation of the Rashba spin-orbit field across the Schottky interface respectively. This experiment, shows an unique method to store and manipulate spin states by an electric field across the Schottky interface.

Paper Details

Date Published: 20 September 2018
PDF: 11 pages
Proc. SPIE 10732, Spintronics XI, 107323B (20 September 2018); doi: 10.1117/12.2320926
Show Author Affiliations
A. Das, Univ. of Groningen (Netherlands)
V. M. Goossens, Univ. of Groningen (Netherlands)
A. S. Goossens, Univ. of Groningen (Netherlands)
T. Banerjee, Univ. of Groningen (Netherlands)


Published in SPIE Proceedings Vol. 10732:
Spintronics XI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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