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High-operating temperatures InAsSb/AlSb heterostructure infrared detectors
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Paper Abstract

An InAsSb/AlSb heterostructure photovoltaic detector structures were grown on a (100) semi-insulating GaAs substrates by a molecular beam epitaxy. We compare the performance of two detectors with a different type of absorbing layers, denoted p+BppBpn+ and p+Bpnn+. InAs0.81Sb0.19 absorption layers allow for a operation up to 5.3 μm cut-off wavelengths at 230 K. p+Bpnn+ detector (n-type absorber) exhibits diffusion-limited dark currents above 200 K. AlSb barrier provides a low values of dark currents and allows a suppression of surface leakage current. With a value of 0.13 A/cm2 at 230 K, the current is less than an order of magnitude larger than those determined by the "Rule 07" for HgCdTe detectors. Dark currents of p+BppBpN+ detector (p-type absorber) are much higher due to a contribution of Shockley-Read-Hall mechanisms. On the other hand, device with a p-type absorber shows highest values of current responsivity, up to 2.5 A/W, point out that there is a trade-off between dark current performance and quantum efficiency.

Paper Details

Date Published: 18 September 2018
PDF: 7 pages
Proc. SPIE 10766, Infrared Sensors, Devices, and Applications VIII, 1076607 (18 September 2018); doi: 10.1117/12.2320539
Show Author Affiliations
M. Kopytko, Military Univ. of Technology (Poland)
E. Gomółka, Military Univ. of Technology (Poland)
P. Martyniuk, Military Univ. of Technology (Poland)
P. Madejczyk, Military Univ. of Technology (Poland)
J. Rutkowski, Military Univ. of Technology (Poland)
A. Rogalski, Military Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 10766:
Infrared Sensors, Devices, and Applications VIII
Paul D. LeVan; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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