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Proceedings Paper

Spin transport and relaxation in germanium detected by electrical measurements (Conference Presentation)
Author(s): Kohei Hamaya
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Paper Abstract

Here we show spin transport and spin relaxation phenomena in germanium (Ge) up to room temperature. Using four-terminal nonlocal voltage and Hanle-effect measurements in lateral spin-valve devices with ferromagnet/Ge Schottky-tunnel contacts, we detected reliable spin transport from low temperatures to room temperature in n-Ge and discussed the spin relaxation mechanism in the conduction band of Ge [1-4]. We also demonstrated the detection of the spin transport in p-Ge by using vertically stacked structures including ferromagnet/Ge interfaces on Si [5,6]. From the magnitude of the spin signals, we also discussed the spin relaxation in p-Ge up to room temperature. From the viewpoint of low contact resistance for applications in the field of group-IV semiconductor spintronics, our technologies are more suitable than ferromagnet/MgO tunnel contacts. [1] Y. Fujita, KH et al., Phys. Rev. B 94, 245302 (2016). [2] M. Yamada, KH et al., Phys. Rev. B 95, 161304(R) (2017). [3] Y. Fujita, KH et al., Phys. Rev. Appl. 8, 014007 (2017). [4] M. Yamada, KH et al., Appl. Phys. Exp. 10, 093001 (2017). [5] M. Kawano, KH et al., Appl. Phys. Lett. 109, 022406 ¬(2016). [6] M. Kawano, KH et al., Phys. Rev. Mater. 1, 034604 (2017). The author appreciates good collaborative research with Prof. K. Sawano, Prof. V. Lazarov, and the colleagues of our group in Osaka University. This work was partly supported by KAKENHI (No. 25246020, 16H02333, 17H06120, 26103003) from JSPS/MEXT.

Paper Details

Date Published: 18 September 2018
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Proc. SPIE 10732, Spintronics XI, 107320H (18 September 2018); doi: 10.1117/12.2320477
Show Author Affiliations
Kohei Hamaya, Osaka Univ. (Japan)


Published in SPIE Proceedings Vol. 10732:
Spintronics XI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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