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Exciton-plasmon interaction in two-dimensional semiconductors for refined light emission (Conference Presentation)
Author(s): Jeongyong Kim
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Paper Abstract

Transition dichalcogenide monolayer (1L-TMD) such as MoS2, MoSe2, WS2 and WSe2 are promising 2D semiconductors with visible or near-IR wavelength emission, suitable for the nanophotonics applications including quantum optical emitters. 1L-TMDs offer advantages such as direct growth on wafers, the ability to tune the properties of the material by controlling the layer thickness, electrostatic doping, and hetero-stacking. Atomically thin, flat geometry of two-dimensional (2D) semiconductors provides the ideal coupling configuration between plasmons and excitons, leading to a new realm of light-matter interaction. It has been shown that the simple hybrid of placing Ag nanowires on MoS2 monolayers forms a highly efficient plasmon emitter and detector. Optoelectronic applications in two-dimensional (2D) transition-metal dichalcogenides (TMDs) are still limited by the weak light absorption, and moreover peak positions and shapes of exciton complexes are sensitively perturbed by varying excitation conditions, inherent from nature of atomically thin layers. Here we show that coupling of excitons with plasmons can spectrally refine the exciton emission of 1L-TMDs, maintaining contribution of only neutral excitons even with high excitation power.

Paper Details

Date Published: 17 September 2018
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Proc. SPIE 10722, Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVI, 107220Z (17 September 2018); doi: 10.1117/12.2320390
Show Author Affiliations
Jeongyong Kim, Sungkyunkwan Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10722:
Plasmonics: Design, Materials, Fabrication, Characterization, and Applications XVI
Din Ping Tsai; Takuo Tanaka, Editor(s)

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