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Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy
Author(s): Saloni Chaurasia; Avijit Chatterjee; Shankar Selvaraja; Sushobhan Avasthi
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Paper Abstract

In this work a heterogeneously integrated germanium (Ge) NIR photo-resistor fabricated on CMOS-compatible silicon substrates is presented. The resistor is fabricated on an epitaxial germanium films grown on silicon using a novel liquid phase crystallization (LPC) process. First, silicon wafers were coated with amorphous germanium deposited using PECVD. Next, Ge film is crystallized into epitaxial germanium using a thermal anneal cycle during which Ge undergoes melting and controlled cooling. The LPE Ge films is polycrystalline but epitaxial with threading dislocation density of ~109 cm-2. On the LPE germanium, NIR photo-resistors were fabricated with metal-semiconductor-metal (MSM) inter-digitated structure with an active area of 150 μm x 300 μm. Responsivity of the devices was characterized using a fiber laser, tunable from 1500 to 1600 nm. With 1550 nm excitation, a photocurrent of 100 μA was measured at a bias of 4V with laser power of 25 mW, corresponding to a responsivity of 4 mA/W.

Paper Details

Date Published: 9 May 2018
PDF: 6 pages
Proc. SPIE 10680, Optical Sensing and Detection V, 106802T (9 May 2018); doi: 10.1117/12.2319148
Show Author Affiliations
Saloni Chaurasia, Indian Institute of Science (India)
Avijit Chatterjee, Indian Institute of Science (India)
Shankar Selvaraja, Indian Institute of Science (India)
Sushobhan Avasthi, Indian Institute of Science (India)


Published in SPIE Proceedings Vol. 10680:
Optical Sensing and Detection V
Francis Berghmans; Anna G. Mignani, Editor(s)

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