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Proceedings Paper

Temperature stable oxide-confined 850-nm VCSELs operating at bit rates up to 25 Gbit/s at 150ºC
Author(s): N. Ledentsov; M. Agustin; J.-R. Kropp; V. A. Shchukin; V. P. Kalosha; K. L. Chi; Z. Khan; J. W. Shi; N. N. Ledentsov
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Paper Abstract

New applications in industrial, automotive and datacom applications require vertical-cavity surface-emitting lasers (VCSELs) operating at very high ambient temperatures at ultrahigh speed. We discuss issues related to high temperature performance of the VCSELs including temperature response and spectral properties. The influence of the gain-to-cavity wavelength detuning on temperature performance and spectral width of the VCSELs is discussed. Performance of the oxide-confined 850 nm VCSELs with increased temperature stability capable of operating at bit rates up to 25 Gbit/s at heat sink temperature of 150°C and 35Gbit/s at 130°C. Furthermore, opposite to previous studies of VCSELs with large gain-to-cavity detuning, which demonstrated strongly increased spectral width and a strong redistribution of the mode intensities upon current increase. VCSELs demonstrated in this work show good reproducibility of a narrow spectrum in a wide range of currents and temperatures. Such performance strongly improves the transmission distance over multi-mode fiber and can reduce mode partition noise during high speed operation.

Paper Details

Date Published: 19 February 2018
PDF: 7 pages
Proc. SPIE 10552, Vertical-Cavity Surface-Emitting Lasers XXII, 105520P (19 February 2018); doi: 10.1117/12.2318015
Show Author Affiliations
N. Ledentsov, VI Systems GmbH (Germany)
M. Agustin, VI Systems GmbH (Germany)
J.-R. Kropp, VI Systems GmbH (Germany)
V. A. Shchukin, VI Systems GmbH (Germany)
V. P. Kalosha, VI Systems GmbH (Germany)
K. L. Chi, National Central Univ. (Taiwan)
Z. Khan, National Central Univ. (Taiwan)
J. W. Shi, National Central Univ. (Taiwan)
N. N. Ledentsov, VI Systems GmbH (Germany)

Published in SPIE Proceedings Vol. 10552:
Vertical-Cavity Surface-Emitting Lasers XXII
Chun Lei; Kent D. Choquette, Editor(s)

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