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Proceedings Paper

GaN HEMT power amplifier for radar waveforms
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Paper Abstract

The paper presents the amplifier for application in an active electronically scanned array (AESA). For design purposes both time- and frequency domain simulations were carried out. The developed amplifier achieved more than 9W of output power at a maximum efficiency of 57% for 9.5 GHz and small-signal gain |S21|>11dB over 9-10 GHz frequency range. Furthermore, the potential of Polish GaN HEMT technology based on domestic, semi-insulating, bulk GaN substrate fabricated by Ammono.

Paper Details

Date Published: 19 April 2018
PDF: 6 pages
Proc. SPIE 10715, 2017 Radioelectronic Systems Conference, 107150N (19 April 2018); doi: 10.1117/12.2317908
Show Author Affiliations
Dawid Kuchta, Warsaw Univ. of Technology (Poland)
Wojciech Wojtasiak, Warsaw Univ. of Technology (Poland)

Published in SPIE Proceedings Vol. 10715:
2017 Radioelectronic Systems Conference
Adam Kawalec; ANDRZEJ WITCZAK, Editor(s)

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