Share Email Print
cover

Proceedings Paper • new

3.1 W narrowband blue external cavity diode laser
Author(s): Jue Peng; Huaijin Ren; Kun Zhou; Yi Li; Weichuan Du; Songxin Gao; Ruijun Li; Jianping Liu; Deyao Li; Hui Yang
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd– Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Paper Details

Date Published: 5 March 2018
PDF: 6 pages
Proc. SPIE 10710, Young Scientists Forum 2017, 107104B (5 March 2018); doi: 10.1117/12.2317685
Show Author Affiliations
Jue Peng, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Huaijin Ren, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Kun Zhou, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Yi Li, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Weichuan Du, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Songxin Gao, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Ruijun Li, Institute of Applied Electronics (China)
Key Lab. of Science and Technology on High Energy Laser (China)
Jianping Liu, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Deyao Li, Suzhou Institute of Nano-Tech and Nano-Bionics (China)
Hui Yang, Suzhou Institute of Nano-Tech and Nano-Bionics (China)


Published in SPIE Proceedings Vol. 10710:
Young Scientists Forum 2017
Songlin Zhuang; Junhao Chu; Jian-Wei Pan, Editor(s)

© SPIE. Terms of Use
Back to Top