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Multi-trigger resist for electron beam and extreme ultraviolet lithography
Author(s): C. Popescu; A. McClelland; D. Kazazis; G. Dawson; J. Roth; Y. Ekinci; W. Theis; A. P. G. Robinson
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Paper Abstract

The multi-trigger resist (MTR) is a new negative tone molecular resist platform for electron beam lithography, as well as extreme ultraviolet and optical lithography. The performance of xMT resist, the precursor to MTR resist, which shows a good combination of sensitivity, low line edge roughness and high-resolution patterning has previously been reported.[1] In order to overcome limitations induced by acid diffusion, a new mechanism - the multi-trigger concept - has been introduced. The results obtained so far as the behaviour of the resist is driven towards the multi-trigger regime by manipulating the resist formulation are presented. A feature size of 13 nm in semi-dense (1:1.5 line/space) patterns, and 22nm diameter pillar patterns are demonstrated in electron beam, and 16 nm half-pitch resolution patterns are demonstrated in (extreme ultraviolet) EUV. An improvement in the LER value is seen in the higher MTR formulations.

Paper Details

Date Published: 19 September 2018
PDF: 6 pages
Proc. SPIE 10775, 34th European Mask and Lithography Conference, 1077502 (19 September 2018); doi: 10.1117/12.2316628
Show Author Affiliations
C. Popescu, Univ. of Birmingham (United Kingdom)
A. McClelland, Irresistible Materials Ltd. (United Kingdom)
D. Kazazis, Paul Scherrer Institute (Switzerland)
G. Dawson, Irresistible Materials Ltd. (United Kingdom)
J. Roth, Nano-C (United States)
Y. Ekinci, Paul Scherrer Institute (Switzerland)
W. Theis, Univ. of Birmingham (United Kingdom)
A. P. G. Robinson, Univ. of Birmingham (United Kingdom)
Irresistible Materials Ltd. (United Kingdom)


Published in SPIE Proceedings Vol. 10775:
34th European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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