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Proceedings Paper

Conductive BiSb topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching
Author(s): Pham Nam Hai; Huynh Duy Khang Nguyen; Kenichiro Yao; Yugo Ueda
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Paper Abstract

We report on epitaxial crystal growth and spin Hall effect in BiSb topological insulator thin films. We show that BiSb thin films with conductivity as high as σ ~ 2.5∗105 Ω-1m-1 can be epitaxially grown on GaAs(111)A substrate. Meanwhile, evaluation of spin-orbit-torque in Bi0.9Sb0.1/MnGa bi-layers reveals a colossal spin Hall angle of θSH ~ 52 and a spin Hall conductivity σSH ~ 1.3∗107 ℏ/2e Ω-1m-1 at room temperature. We demonstrate that BiSb thin films can generate a colossal spin-orbit field of 2.3 kOe/(MA/cm2) and a critical switching current density as low as 1.5 MA/cm2 in Bi0.9Sb0.1/MnGa bi-layers. BiSb is the best candidate for the first industrial application of topological insulators.

Paper Details

Date Published: 20 September 2018
PDF: 7 pages
Proc. SPIE 10732, Spintronics XI, 107320U (20 September 2018); doi: 10.1117/12.2316612
Show Author Affiliations
Pham Nam Hai, Tokyo Institute of Technology (Japan)
The Univ. of Tokyo (Japan)
Huynh Duy Khang Nguyen, Tokyo Institute of Technology (Japan)
Kenichiro Yao, Tokyo Institute of Technology (Japan)
Yugo Ueda, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 10732:
Spintronics XI
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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