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Proceedings Paper

Photovoltaic edge-effect in planar GaAs MESFETs
Author(s): D. Abbott
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Paper Abstract

A significant new internal gain effect, in planar MESFETs has been discovered which we call the "photovoltaic self-biasing edge-effect." The edge-effect can be exploited to attain up to a factor of ten improvement in detector photosensitivity.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778CV (1 September 1996); doi: 10.1117/12.2316152
Show Author Affiliations
D. Abbott, The Univ. of Adelaide (Australia)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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