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Proceedings Paper

Intensity squeezing in semiconductor lasers
Author(s): Tiancai Zhang
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Paper Abstract

Intensity squeezing is generated in single mode semiconductor laser by weak external mirror feedback. The measurable squeezing is 4.7%, corresponding to 9% below the SNL after correction for transmission and detection efficiency. It proves that intensity squeezing can be obtained at room temperature without line-narrowing techniques.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778BI (1 September 1996); doi: 10.1117/12.2316103
Show Author Affiliations
Tiancai Zhang, Shanxi Univ. (China)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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