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Proceedings Paper

Enhanced doubling of GaAlAs diode laser in LiIO3 crystal
Author(s): Kwang Hoon Jeong
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Paper Abstract

The second harmonic of the 794 nm output of a GaAlAs diode laser is obtained in an external ring enhancement cavity. The dependence of the second harmonic power on the input power has been measured and compared with the theory. The second harmonic power of 4.2 μW at 397 nm has been obtained with an input fundamental power of 20 mW by using an 10-mm-long LiIO3 crystal.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778B7 (1 September 1996); doi: 10.1117/12.2316092
Show Author Affiliations
Kwang Hoon Jeong, Hanyang Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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