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Proceedings Paper

Terahertz radiation and ultrafast carrier dynamics in semi-insulating GaAs
Author(s): Li Wang
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Paper Abstract

Terahertz (THz) far infrared radiation with a subpicosecond pulse duration is generated from an undoped semi-insulating GaAs (100) surface illuminated by femtosecond laser pulses. An anormalous enhancement of the THz emission is observed at room temperature when another pump pulse is used, which is attributed to the mobility increase resulted from carrier trapping by midgap defect levels, such as EL2 deep centers. An electron capture cross section of about 10-12 cm2 is estimated using this model.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778AP (1 September 1996); doi: 10.1117/12.2316074
Show Author Affiliations
Li Wang, Institute of Physics (China)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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