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Proceedings Paper

Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: a leaky barrier
Author(s): D. S. Kim
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Paper Abstract

The anomalously large Stokes and anti-Stokes real space charge transfer over thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells (ADQW) in low temperature and low excitation limits has remained unsolved [1]. Here, we conclusively identify the inhomogeneity of the alloy barrier potential as the source of the Stokes transfer.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27789W (1 September 1996); doi: 10.1117/12.2316045
Show Author Affiliations
D. S. Kim, Seoul National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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