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Proceedings Paper

Excitonic transitions in GaN epitayer layers grown by MOCVD
Author(s): Guangde Chen
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Paper Abstract

Optical transitions including free-and impurity-bound excitors in both n and p-type GaN epitaxial layers grown by MOCVD have been studied by time- resolved photoluminescence measurements. The radiative recombination lifetimes of the free excitions and excitons bound to neutral donors and acceptors in GaN have been obtained.

Paper Details

Date Published: 1 September 1996
PDF: 2 pages
Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 27788N (1 September 1996); doi: 10.1117/12.2316000
Show Author Affiliations
Guangde Chen, Xi'an Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 2778:
17th Congress of the International Commission for Optics: Optics for Science and New Technology
Joon-Sung Chang; Jai-Hyung Lee; ChangHee Nam, Editor(s)

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