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Effect of total dose irradiation on Si and InGaAs detectors
Author(s): Jingjing Shi; Yadong Hu; Shanshan Cui; Xinyu Yu; Lin Huang; Xiaobing Sun; Jin Hong
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Paper Abstract

According to the environmental requirement of detectors, we studied the characteristics of Si and InGaAs detectors irradiated by the Cobalt60-γray with the total dose of 5krad, 10 krad, 20 krad, 30krad respectively. We measured the dark current and relative spectral responsivity by the Relative Responsivity Measurement Apparatus before and after irradiation. The results suggest that the characteristics of Silicon and InGaAs detectors don't change obviously after different total dose irradiation, both detectors can work in the space irradiation environment due to its stability and reliability.

Paper Details

Date Published: 20 February 2018
PDF: 8 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106972H (20 February 2018); doi: 10.1117/12.2315486
Show Author Affiliations
Jingjing Shi, Univ. of Science and Technology of China (China)
Yadong Hu, Anhui Institute of Optics and Fine Mechanics (China)
Shanshan Cui, Anhui Institute of Optics and Fine Mechanics (China)
Xinyu Yu, Anhui Institute of Optics and Fine Mechanics (China)
Lin Huang, Beijing Satellite Manufacturing Factory (China)
Xiaobing Sun, Anhui Institute of Optics and Fine Mechanics (China)
Jin Hong, Univ. of Science and Technology of China (China)
Anhui Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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