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Proceedings Paper

Low energy proton irradiation effects on InP/InGaAs DHBTs and InP-base frequency dividers
Author(s): Xingyao Zhang; Yudong Li; Qi Guo; Jie Feng
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Paper Abstract

InP/InGaAs DHBTs and frequency dividers are irradiated by low energy proton, and displacement damage effect of the devices are analyzed. InP/InGaAs DHBTs has been made DC characteristics measurements, and the function measurement for frequency dividers has been done both before and after proton irradiation. The breakdown voltage of InP DHBTs drop to 3.7V When the fluence up to 5x1013 protons/cm2. Meanwhile, the function of frequency dividers get out of order. Degradation of DC characteristics of DHBTs are due to the radiation-induced defects in the quasi neutral base and the space charge region of base-collector and base-emitter junctions. The performance deterioration of DHBTs induce the fault of frequency dividers, and prescaler may be the most sensitive circuit.

Paper Details

Date Published: 5 March 2018
PDF: 6 pages
Proc. SPIE 10710, Young Scientists Forum 2017, 107100C (5 March 2018); doi: 10.1117/12.2315313
Show Author Affiliations
Xingyao Zhang, Xinjiang Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Device (China)
Yudong Li, Xinjiang Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Device (China)
Qi Guo, Xinjiang Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Device (China)
Jie Feng, Xinjiang Technical Institute of Physics and Chemistry (China)
Xinjiang Key Lab. of Electronic Information Material and Device (China)


Published in SPIE Proceedings Vol. 10710:
Young Scientists Forum 2017
Songlin Zhuang; Junhao Chu; Jian-Wei Pan, Editor(s)

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