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Proceedings Paper

Nanosecond-laser induced crosstalk of CMOS image sensor
Author(s): Rongzhen Zhu; Yanbin Wang; Qianrong Chen; Xuanfeng Zhou; Guangsen Ren; Longfei Cui; Hua Li; Daoliang Hao
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Paper Abstract

The CMOS Image Sensor (CIS) is photoelectricity image device which focused the photosensitive array, amplifier, A/D transfer, storage, DSP, computer interface circuit on the same silicon substrate[1]. It has low power consumption, high integration,low cost etc. With large scale integrated circuit technology progress, the noise suppression level of CIS is enhanced unceasingly, and its image quality is getting better and better. It has been in the security monitoring, biometrice, detection and imaging and even military reconnaissance and other field is widely used. CIS is easily disturbed and damaged while it is irradiated by laser. It is of great significance to study the effect of laser irradiation on optoelectronic countermeasure and device for the laser strengthening resistance is of great significance. There are some researchers have studied the laser induced disturbed and damaged of CIS. They focused on the saturation, supersaturated effects, and they observed different effects as for unsaturation, saturation, supersaturated, allsaturated and pixel flip etc. This paper research 1064nm laser interference effect in a typical before type CMOS, and observring the saturated crosstalk and half the crosstalk line. This paper extracted from cmos devices working principle and signal detection methods such as the Angle of the formation mechanism of the crosstalk line phenomenon are analyzed.

Paper Details

Date Published: 20 February 2018
PDF: 7 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 1069745 (20 February 2018); doi: 10.1117/12.2315234
Show Author Affiliations
Rongzhen Zhu, Electronic Equipment Testing Ctr. (China)
Yanbin Wang, Electronic Equipment Testing Ctr. (China)
Qianrong Chen, Electronic Equipment Testing Ctr. (China)
Xuanfeng Zhou, Electronic Equipment Testing Ctr. (China)
Guangsen Ren, Electronic Equipment Testing Ctr. (China)
Longfei Cui, Electronic Equipment Testing Ctr. (China)
Hua Li, Electronic Equipment Testing Ctr. (China)
Daoliang Hao, Electronic Equipment Testing Ctr. (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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