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Proceedings Paper

Total ionizing dose effect and damage mechanism on saturation output voltage of charge coupled device
Author(s): Lin Wen; Yu-dong Li; Qi Guo; Chao-min Wang
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Paper Abstract

Total ionizing dose effect is a major threat to space applications of CCD, which leads to the decrease of CCD saturation output voltage and the increase of dark signal. This paper investigated CCD and its readout circuit for experimental samples of different channel width to length ratio of MOSFET, and readout circuit amplifier, and CCD. The irradiation source was 60Co- gamma ray. through testing the parameters degradation of MOSFET and amplifier degradation, the generation and annealing law of irradiation induced defects in MOS single tube are analyzed. Combined with the radiation effect of amplifier and CCD, The correlation of radiation damage of the MOSFET and the readout circuit amplifier and CCD parameter degradation is established. Finally, this paper reveals the physical mechanism of ionizing radiation damage of the readout circuit. The research results provide a scientific basis for the selection of anti-radiation technology and structure optimization of domestic CCD.

Paper Details

Date Published: 20 February 2018
PDF: 8 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106971J (20 February 2018); doi: 10.1117/12.2314815
Show Author Affiliations
Lin Wen, Xinjiang Technical Institute of Physics and Chemistry (China)
Yu-dong Li, Xinjiang Technical Institute of Physics and Chemistry (China)
Qi Guo, Xinjiang Technical Institute of Physics and Chemistry (China)
Chao-min Wang, Chongqing Optoelectronics Research Institute (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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