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Proceedings Paper

Time-resolved photoluminescence spectra of InGaN epilayer
Author(s): Wei Li; Wei Ying Wang
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Paper Abstract

InGaN epitaxial layer has been studied by means of temperature dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). The PL peak energy was fitted by a thermal activation and thermal transfer model, a fast carriers transfer time was obtained. A small redshift with increasing time was observed at low temperature in the TRPL spectra, and the redshift was enhancing with increasing temperature. These behaviors are caused by a change in the carrier dynamics with increasing temperature due to the carriers transferring in the localized states in InGaN eplayer.

Paper Details

Date Published: 5 March 2018
PDF: 8 pages
Proc. SPIE 10710, Young Scientists Forum 2017, 107100R (5 March 2018); doi: 10.1117/12.2314701
Show Author Affiliations
Wei Li, Aviation Industry Corp. of China (China)
Wei Ying Wang, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 10710:
Young Scientists Forum 2017
Songlin Zhuang; Junhao Chu; Jian-Wei Pan, Editor(s)

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