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A comparison of proton damage effects on P- and N-Channel CCDs I: performance following cryogenic irradiation (Conference Presentation)
Author(s): Nathan L. Bush; Ben Dryer; Anton Lindley De-Caire; Ross Burgon; Andrew Holland

Paper Abstract

P-Channel CCDs may offer improved tolerance of radiation damage compared to the N-Channel equivalent due to favorable differences in the population of silicon defects that impact charge transfer performance following irradiation. The technology may therefore be attractive for applications within harsh radiation environments, yet requires further validation against existing N-Channel technology to better understand the regime where performance benefits can be expected. In this study, a P- and N-Channel CCD204, manufactured by Teledyne-e2v, were irradiated simultaneously biased and under cryogenic conditions. Following irradiation, the devices were tested for charge transfer performance at multiple temperatures and clocking speeds consistent with large-scale space missions. Silicon defects were also probed within each device using the “trap pumping” technique across the parameter space relevant for optimization of charge transfer. Performance differences between each device are presented and linked to the relevant silicon defects identified through trap pumping. We conclude with an outlook on future results that include the impact of both a room temperature (298 K) and high temperature (373 K) anneal on the performance of each device.

Paper Details

Date Published: 10 July 2018
PDF
Proc. SPIE 10709, High Energy, Optical, and Infrared Detectors for Astronomy VIII, 107090M (10 July 2018); doi: 10.1117/12.2313447
Show Author Affiliations
Nathan L. Bush, The Open Univ. (United Kingdom)
Ben Dryer, The Open Univ. (United Kingdom)
Anton Lindley De-Caire, The Open Univ. (United Kingdom)
Ross Burgon, The Open Univ. (United Kingdom)
Andrew Holland, The Open Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 10709:
High Energy, Optical, and Infrared Detectors for Astronomy VIII
Andrew D. Holland; James Beletic, Editor(s)

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