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Proceedings Paper

High performance atomistic simulation of thin films porosity and surface structure
Author(s): F. V. Grigoriev; V. B. Sulimov; A. V. Tikhonravov
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Paper Abstract

The earlier developed molecular dynamics approach is applied to the investigation of porosity and surface structure of thin films obtained under different deposition conditions. The empirical Monte-Carlo simulation procedure is developed and applied for the search of pores in silicon dioxide thin films. The pores distribution depending on the thickness of growing films and porosity dependence on substrate temperature and deposition energy are studied. It is revealed that the dimensions of pores increase with the decrease of deposition energy. The growth of substrate temperature from 300 K to 500 K results in the increase of porosity in the case of high-energy deposition and in the decrease of porosity in the case of low-energy deposition. It is found that in the case of high-energy deposition film structural properties vary insignificantly with the variation of energy distribution of deposited atoms providing that the average energy of deposited atoms is constant.

Paper Details

Date Published: 5 June 2018
PDF: 7 pages
Proc. SPIE 10691, Advances in Optical Thin Films VI, 1069109 (5 June 2018); doi: 10.1117/12.2312707
Show Author Affiliations
F. V. Grigoriev, M.V. Lomonosov Moscow State Univ. (Russian Federation)
V. B. Sulimov, M.V. Lomonosov Moscow State Univ. (Russian Federation)
A. V. Tikhonravov, M.V. Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10691:
Advances in Optical Thin Films VI
Michel Lequime; H. Angus Macleod; Detlev Ristau, Editor(s)

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