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Proceedings Paper

128x128 InGaAs detector array for 1.0-1.7 um
Author(s): Gregory H. Olsen; Abhay M. Joshi; M. J. Lange; K. M. Woodruff; E. Mykietyn; D. G. Gay; G. C. Erickson; Donald A. Ackley; Vladimir S. Ban; Craig O. Staller
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Paper Abstract

A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.

Paper Details

Date Published: 1 November 1990
PDF: 6 pages
Proc. SPIE 1341, Infrared Technology XVI, (1 November 1990); doi: 10.1117/12.23121
Show Author Affiliations
Gregory H. Olsen, EPITAXX, Inc. (United States)
Abhay M. Joshi, EPITAXX, Inc. (United States)
M. J. Lange, EPITAXX, Inc. (United States)
K. M. Woodruff, EPITAXX, Inc. (United States)
E. Mykietyn, EPITAXX, Inc. (United States)
D. G. Gay, EPITAXX, Inc. (United States)
G. C. Erickson, EPITAXX, Inc. (United States)
Donald A. Ackley, EPITAXX, Inc. (United States)
Vladimir S. Ban, EPITAXX, Inc. (United States)
Craig O. Staller, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 1341:
Infrared Technology XVI
Irving J. Spiro, Editor(s)

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