Share Email Print
cover

Proceedings Paper

Research VIS-NIR optical constants of Si films deposited by different techniques
Author(s): Dandan Liu; Huasong Liu; Yiqin Ji; Yugang Jiang; Yuzhe Xing; Jian Leng; Kewen Zhuang
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Silicon thin films were prepared on silica substrates by ion beam sputtering, electron beam evaporation and ion assisted deposition. The transmittance spectrum, the reflectance spectrum and the ellipsometric spectrum were obtained in the wavelength region from 300nm and 2000nm, where Lambda 900 spectroscopy and VASE ellipsometer were applied. The optical constants were calculated by multiple spectrum analysis with WVASE32 which is the analysis software for ellipsometry of J.A.Woollam company. There were about ten nanometers of silicon dioxide layers on the surface of the silicon films. The near infrared extinction coefficient of the silicon thin film prepared by ion beam sputtering was the largest, followed by ion assisted deposition, the extinction coefficient of the electron beam evaporated silicon film was the smallest, and the refractive index of the electron beam evaporated silicon thin film was the lowest. The heat treatment experiments of 300°C and 400°C showed that the refractive index of the 600nm-200nm band of the ion beam sputtering silicon film decreased obviously, while the refractive index of the electron beam evaporation and the ion assisted deposition silicon thin film had little change, and the heat treatment at 300°C could significantly reduce the extinction coefficient of the near infrared band of the three silicon thin films. In the further heat treatment at 400°C, the extinction coefficient of the ion beam sputtering silicon film and the ion assisted deposition silicon film continued to decrease, while the extinction coefficient of the electron beam evaporated silicon film increased.

Paper Details

Date Published: 27 June 2018
PDF: 8 pages
Proc. SPIE 10691, Advances in Optical Thin Films VI, 106910P (27 June 2018); doi: 10.1117/12.2312052
Show Author Affiliations
Dandan Liu, Tianjin Key Lab. of Optical Thin Film (China)
Joint Lab. of Optoelectronic Materials and Intelligent Surface Structures (China)
Huasong Liu, Tianjin Key Lab. of Optical Thin Film (China)
China Aerospace Science & Industry Corp. (China)
Yiqin Ji, Tianjin Key Lab. of Optical Thin Film (China)
Joint Lab. of Optoelectronic Materials and Intelligent Surface Structures (China)
National Key Lab. of Science and Technology on Tunable Laser (China)
Yugang Jiang, Tianjin Key Lab. of Optical Thin Film (China)
Joint Lab. of Optoelectronic Materials and Intelligent Surface Structures (China)
Yuzhe Xing, Tianjin Key Lab. of Optical Thin Film (China)
Joint Lab. of Optoelectronic Materials and Intelligent Surface Structures (China)
Jian Leng, Tianjin Key Lab. of Optical Thin Film (China)
Joint Lab. of Optoelectronic Materials and Intelligent Surface Structures (China)
Kewen Zhuang, Tianjin Key Lab. of Optical Thin Film (China)
Joint Lab. of Optoelectronic Materials and Intelligent Surface Structures (China)


Published in SPIE Proceedings Vol. 10691:
Advances in Optical Thin Films VI
Michel Lequime; H. Angus Macleod; Detlev Ristau, Editor(s)

© SPIE. Terms of Use
Back to Top