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Study on operational characteristics of Electron-Bombarded Silicon Avalanche Diode (EBSAD) hybrid photodetector
Author(s): Pengxiao Xu; Jiaye Tang; Xiao Wang; Liying Dai; Wenjin Zhao; Xinlong Chen; Dongchen Wang; Jun Shentu; Guanghua Tang
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Paper Abstract

Vacuum-semiconductor hybrid photodetector is a new kind of photoelectric detecting device. In this paper, the basic structure and principle of electron bombarded avalanche diode hybrid photodetector are introduced. Then a sample of electron bombarded silicon avalanche diode hybrid photodetector is successfully fabricated. The results show that the response range of the photodetector is 300nm-800nm, and the electron bombarded gain is more than 600 times under the high voltage of -8000V. The breakdown voltage of silicon avalanche diode avalanche is about -202V. The dark current of device under linear avalanche mode with gain equals 30 is about 3.2nA. The total gain of the tube after electron bombarded gain and avalanche gain are cascaded can be up to 1.5 × 104.

Paper Details

Date Published: 20 February 2018
PDF: 7 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 1069717 (20 February 2018); doi: 10.1117/12.2311854
Show Author Affiliations
Pengxiao Xu, Nanjing Electronic Devices Institute (China)
Jiaye Tang, Nanjing Electronic Devices Institute (China)
Xiao Wang, Nanjing Electronic Devices Institute (China)
Liying Dai, Nanjing Electronic Devices Institute (China)
Wenjin Zhao, Nanjing Electronic Devices Institute (China)
Xinlong Chen, Nanjing Electronic Devices Institute (China)
Dongchen Wang, Nanjing Electronic Devices Institute (China)
Jun Shentu, Nanjing Electronic Devices Institute (China)
Guanghua Tang, Nanjing Electronic Devices Institute (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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