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Proceedings Paper

Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent
Author(s): Yousef Alahmadi; Patrick LiKam Wa
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Paper Abstract

Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-free disordering technique. Varying degrees of disordering are achieved by rapidly annealing silicon nitride-capped samples at temperatures ranging from 730°C to 830°C for 20 s. The lasing wavelength shift resulting from the intermixing, ranges between 28.2 nm and 147.2 nm. As the annealing temperature is increased, the lasing threshold currents of the fabricated waveguide lasers increase from 25mA to 45mA, while the slope efficiency decrease from 0.101 W/A to 0.068 W/A, compared to a threshold current of 27.8 mA and a slope efficiency of 0.121 W/A for an as-grown laser diode.

Paper Details

Date Published: 19 February 2018
PDF: 6 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055307 (19 February 2018); doi: 10.1117/12.2311369
Show Author Affiliations
Yousef Alahmadi, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
King Abdulaziz City for Science and Technology (Saudi Arabia)
Patrick LiKam Wa, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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