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Proceedings Paper

Real-time optical diagnostics for epitaxial growth
Author(s): David E. Aspnes; Itaru Kamiya
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Paper Abstract

Various optical techniques have been developed over the last few years for real-time analysis of surfaces and near-surface regions of semiconductor epitaxy. These techniques are providing insights into microscopic mechanisms of epitaxy and opportunities for sample-driven closed- loop feedback control of the epitaxial growth process. Both aspects are expected to become increasingly important as device complexity increases and tolerances become more stringent. Examples are provided and opportunities discussed.

Paper Details

Date Published: 5 February 1996
PDF: 17 pages
Proc. SPIE 2730, Second Iberoamerican Meeting on Optics, (5 February 1996); doi: 10.1117/12.231087
Show Author Affiliations
David E. Aspnes, North Carolina State Univ. (United States)
Itaru Kamiya, Research Development Corp. of Japan and Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 2730:
Second Iberoamerican Meeting on Optics
Daniel Malacara-Hernandez; Sofia E. Acosta-Ortiz; Ramon Rodriguez-Vera; Zacarias Malacara; Arquimedes A. Morales, Editor(s)

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